Samsung’s semiconductor division yesterday announced that it has started production of its 3nm process node applying Gate-All-Around (GAA) transistor architecture. This new GAA architecture reduces the supply voltage level to improve performance without increasing the power requirement. It is important to note that Samsung is the first to introduce 3nm process with the MBCFET, beating the current market leader TSMC.
“We will continue active innovation in competitive technology development and build processes that help expedite achieving maturity of technology,” said Dr. Siyoung Choi, President and Head of Foundry Business at Samsung Electronics.
Compared to 5nm process, the first-generation 3nm process can:
- Reduce power consumption by up to 45%
- Improve performance by 23
- Reduce area by 16%
Compared to 5nm process, the second-generation 3nm process can:
- Reduce power consumption by up to 50%
- Improve performance by 30%
- Reduce area by 35%
According to rumors, Qualcomm has already reserved Samsung’s 3nm process node capacity for its upcoming flagship mobile processor.